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| Bulletin PD-20996 rev. E 12/02 100BGQ030 100BGQ030J SCHOTTKY RECTIFIER 100 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform @ TC IDC VRRM IFSM @ tp = 5 s sine VF @100 Apk typical @TJ TJ range Maximum 100BGQ030 100 110 141 30 4500 0.48 150 - 55 to 150 Description/ Features Units A C A V A V C C The 100BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 150C TJ operation High Frequency Operation Ultra low forward voltage drop Continuous High Current operation Guard ring for enhanced ruggedness and long term reliability PowIRtabTM package Case Styles 100BGQ030 100BGQ030J www.irf.com 1 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) 30 VRWM Max. Working Peak Reverse Voltage (V) 100BGQ030 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IF(RMS) RMS Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-RepetitiveAvalancheEnergy Repetitive Avalanche Current 100BGQ Units 100 141 4500 850 36 8 A mJ A A A TC = 107C Conditions 50% duty cycle @ TC = 110C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 8 Amps, L = 1.12 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Forward Voltage Drop (1) (2) 100BGQ Units Typ. Max. Conditions @ 50A @ 100A @ 50A @ 100A TJ = 25 C TJ = 125C TJ = 125 C TJ = 150 C TJ = TJ max. VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 C Measured from tab to mounting plane TJ = 25 C TJ = 150 C VR = rated VR VR = 15V VR = 30V 0.46 0.48 0.55 0.58 0.35 0.37 0.48 0.51 V V V V mA mA mA mA V m pF nH V/ s IRM Reverse Leakage Current (1) 0.6 80 2.4 160 260 460 800 1100 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance (Rated VR) 0.252 2.4 3800 3.5 10000 dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range (1) Pulse Width < 300s, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF 100BGQ Units -55 to 150 -55 to 150 0.50 0.20 5 (0.18) Min. Max. 1.2 (10) 2.4 (20) C C C/W C/W g (oz.) N*m (Ibf-in) DCoperation Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Mounting surface , smooth and greased PowIRtabTM 2 www.irf.com 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 1000 1000 T J = 150C Reverse Current - I R (mA) 100 125C 100C 10 75C 50C 25C 1 Instantaneous Forward Current - I F (A) 100 0.1 0.01 0 5 10 15 20 25 30 TJ = 150C TJ = 125C TJ = 25C 10 (pF) 10000 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 1 Junction Capacitance - C T J = 25C T 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1000 0 5 10 15 20 25 30 35 Forward Voltage Drop - V FM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 Thermal Impedance Z thJC (C/W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM Single Pulse (Thermal Resistance) Notes: t1 t2 1. Duty factor D = t 1/ t 2 2. Peak TJ = PDM x Z thJC+ T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 150 Allowable Case Temperature - (C) Average Power Loss - (Watts) 140 130 120 110 Square wave (D = 0.50) 100 80% Rated V R applied 90 see note (3) 100 DC D = 0.20 D = 0.25 80 D = 0.33 D = 0.50 D = 0.75 60 RMS Limit DC 40 20 80 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - I FSM (A) 10000 Fig. 6 - Forward Power Loss Characteristics 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L HIGH-SPEED SWITCH FREE-WHEEL DIODE 40HFL40S02 + DUT IRFP460 Rg = 25 ohm Vd = 25 Volt CURRENT MONITOR Fig. 8 - Unclamped Inductive Test Circuit (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 Outline Table Case Style PowIRtabTM Dimensions in millimeters and (inches) Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches) www.irf.com 5 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 Ordering Information Table Device Code 100 BGQ 030 1 1 2 3 4 6 2 3 J 4 Current Rating Essential Part Number Voltage code: Code = VRRM none = PowIRtabTM standard J = Short Lead Version *************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T *************************************************** This model .SUBCKT 100bgq30 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=1.07823961851333E-04A, N=1.0394338412755, BV=30V, + IBV=0.125061622097042A,RS= 0.000316667,CJO=2.88578786999339E-08, +VJ=1.30385147429609,XTI=2,EG=0.697469117594151) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=6.48759701319255) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-2.690102E-03/ 6.487597)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*9.995116E-02*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 100bgq30 Thermal Model Subcircuit .SUBCKT 100bgq30T 5 1 CTHERM1 5 4 3.02E+3 CTHERM2 4 3 4.96E+1 CTHERM3 3 2 3.84E+4 CTHERM4 2 1 3.02E+6 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 4 3 2 1 1.02E-1 3.83E-1 6.09E-2 1.00E-5 .ENDS 100bgq30T 6 www.irf.com 100BGQ030, 100BGQ030J Bulletin PD-20996 rev. E 12/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/02 www.irf.com 7 This datasheet has been download from: www..com Datasheets for electronics components. |
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